2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1gate 2drain 3source 2SK2504 features low on-resistance. fast switching speed. wide soa (safe operating area). easily designed drive circuits. easy to parallel. absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 100 v gate to source voltage v gss 20 v i d 5a i dp *20 a power dissipation p d 20 w channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain source breakdown voltage v dss i d =1ma,v gs =0v 100 v drain cut-off current i dss v ds =100v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 100 na gate threshold voltage v gs(th) v ds =10v,i d =1ma 1.0 2.5 v forward transfer admittance y fs v ds =10v,i d =2.5a 4.0 s v gs =10v,i d =2.5a 0.18 0.22 v gs =4v,i d =2.5a 0.25 0.28 input capacitance c iss 520 pf output capacitance c oss 175 pf reverse transfer capacitance c rss 60 pf turn-on delay time t on 5ns rise time t r 20 ns turn-off delay time t off 50 ns fall time tf 20 ns v ds =10v,v gs =0,f=1mhz drain to source on-state resistance r ds(on) i d =2.5a,v gs(on) =10v,r g =10 ,rl=20 ,v dd =50v smd type ic mosfet smd type product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
|
